advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -30v simple drive requirement r ds(on) 9m fast switching characteristic i d -75a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 6 2 /w data and specifications subject to change without n otice 201501155 maximum thermal resistance, junction-ambient (pcb m ount) 4 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range 89 -55 to 150 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 drain current, v gs @ 10v -50 pulsed drain current 1 -300 halogen-free product 1 ap6679gs/p-hf rating -30 + 25 -75 g d s g d s to-263(s) g d s to-220(p) ap6679 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resis tance and fast switching performance. it provides the designer with a n extreme efficient device for use in a wide range of power a pplications. the to-263 package is widely preferred for all commercial-i ndustrial surface mount applications using infrared reflow techniqu e and suited for high current application due to the low connection resis tance. the through-hole version (ap6679gp) are available for low-pro file applications.
ap6679gs/p-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m v gs =-4.5v, i d =-24a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-24a - 34 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua i gss gate-source leakage v gs = + 25, v ds =0v - - + 100 na q g total gate charge i d =-16a - 42 67 nc q gs gate-source charge v ds =-24v - 6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 25 - nc t d(on) turn-on delay time v ds =-15v - 11 - ns t r rise time i d =-16a - 35 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 58 - ns t f fall time r d =0.94 - 78 - ns c iss input capacitance v gs =0v - 2870 4590 pf c oss output capacitance v ds =-25v - 960 - pf c rss reverse transfer capacitance f=1.0mhz - 740 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-24a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-16a, v gs =0v, - 47 - ns q rr reverse recovery charge di/dt=-100a/s - 43 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is -75a . this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 4.surface mounted on 1 in 2 copper pad of fr4 board
ap6679gs/p-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 7 9 11 13 15 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -24a t c = 25 0 40 80 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 0.6 1 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v -4.5v v g =-3.0v
ap6679gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -16a v ds = -24v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t c =25 o c single pulse
marking information to-263 to-220 5 ap6679gs/p-hf part number package code meet rohs requirement for low voltage mosfet only date code (ywwsss) y last digit of the year ww week sss sequence 6679gs ywwsss part number package code meet rohs requirement for low voltage mosfet only 6679gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
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